d ue. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 TIP29, TIP29a, TIP29b, TIP29c npn silicon power transistors designed for complementary use with the tip30 series 30 w at 25c case temperature 1 a continuous collector current 3 a peak collector current customer-specified selections available to-220 p/ (topv ickage iew) 1 2 3 o pin 2 is in electrical contact with the mounting base. absolute maximum ratings at 25c case temperature (unless otherwise noted) rating collector-base voltage (ie = 0) collector-emitter voltage (ib = 0) TIP29 TIP29a TIP29b TIP29c TIP29 TIP29a TIP29b TIP29c emitter-base voltage continuous collector current peak collector current (see note 1 ) continuous base current continuous device dissipation at (or below) 25c case temperature (see note 2) continuous device dissipation at (or below) 25c free air temperature (see note 3) undamped inductive load energy (see note 4) operating junction temperature range storage temperature range lead temperature 3.2 mm from case for 1 0 seconds symbol vcbo vceo vebo ic icm ib plot plot vjl^ tj tstg tl value 80 100 120 140 40 60 80 100 5 1 3 0.4 30 2 32 -65to+150 -65to+150 250 unit v v v a a a w w mj c c "c notes: 1. this value applies for tp< 0.3 ms, duty cycle < 10%. 2. derate linearly to 1 50c case temperature at the rate of 0.24 w/c. 3. derate linearly to 1 50c free air temperature at the rate of 16 mw/c. 4. this rating is based on the capability of the transistor to operate safely in a circuit of: l = 20 mh, lb(on) = 0.4 a, rbe = 100 fi v be(off) = 0, rs = 0.10, 20v nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
TIP29, TIP29a, TIP29b, TIP29c npn silicon power transistors electrical characteristics at 25c case temperature parameter collector-emitter (br)ceo breakdown v0|tage collector-emitter ces cut-off current collector cut-off |ceo current emitter cut-off 'ebo current forward current hpc transfer ratio collector-emitter ce(sat> saturation voltage base-emitter be voltage small signal forward hfp current transfer ratio small signal forward hfp current transfer ratio test conditions TIP29 TIP29a >c= 30 ma ,b = 0 j|p29b (see note 5) t|p2gc vce= 80v vbe = 0 TIP29 vce = 100v vbe = 0 TIP29a vce = 120v vbe = 0 TIP29b vce = 140 v vbe = 0 TIP29c vce= 30v ib = 0 TIP29/29a vce = 60 v ib = 0 TIP29b/29c veb= 5v lc = 0 vc!= 4v !c = '?a (see notes 5 and 6) ib= 125ma lc = 1a (see notes 5 and 6) vce = 4 v |c = 1 a (see notes 5 and 6) vce= 10v ic = 0.2a f=1khz vce= 10v i0 = 0.2a f = 1 mhz win 40 60 80 100 40 15 20 3 typ max 0.2 0.2 0.2 0.2 0.3 0.3 1 75 0.7 1.3 unit v ma ma ma v v notes: 5. these parameters must be measured using pulse techniques, tp = 300 us, duty cycle < 2%. 6. these parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts. thermal characteristics parameter r9jc junction to case thermal resistance reja junction to free air thermal resistance min typ max 4.17 62.5 unit c/w c/w resistive-load-switching characteristics at 25c case temperature parameter ton turn-on time toff turn-off time test conditions t lc=1a lb(on) = 0.1a lb |
